大学英语词汇短语释义解析及例句 aluminum nitride

大学英语词汇短语释义解析及例句 aluminum nitride


释义:

aluminum nitride [无化] 氮化铝

例句:



The process of flip chip based on aluminum nitride is studied.

研究了以氮化铝为基板的倒扣封装的工艺。



Disclosed is a process for producing an ultrafine powder of aluminum nitride.

披露是生产的氮化铝超细粉加工。



However, there has not article about direct synthesis of aluminum nitride in high-energy ball mill.

但用高能球磨直接氮化合成氮化铝的方法尚未报道。



Aluminum nitride is an important semi conductive material used in the blue and near ultraviolet band.

氮化铝(ain)是一种重要的近紫外、蓝光半导体材料。



We obtained rods, flakes, spheres, porous aluminum nitride by control of synthesis conditions, respectively.

实验中通过控制条件得到了棒状、片状、球状和多孔形貌的氮化铝粉末。



The method comprises: (1) sintering aluminum nitride ceramic at a low temperature by plasma-discharging sintering;

该方法主要包括三个部分:(1)利用放电等离子烧结技术实现氮化铝陶瓷的较低温度烧结;



Effects on the rheological behavior of slurry for tape-casting aluminum nitride substrate were studied systematically.

系统地研究了流延法制备氮化铝基片过程中影响流延浆料粘度的主要因素。



Since coefficients of thermal expansion between aluminum nitride and silicon are near, large thermal stress will not be introduced.

氮化铝的热膨胀系数与硅的十分接近,因此不会引入大的热应力。



Instead of a beam, they fashioned a tiny diving board of aluminum nitride plated with aluminum that vibrated by getting thinner and thicker.

研究者们利用一块镀铝的氮化铝微小跳板代替了光束,跳板上的铝层通过变薄和变厚来进行振动。



Provided is a method of efficiently and strongly joining ceramics even when they are ceramics of extremely low dielectric loss factor, such as aluminum nitride.

本发明提供即使是像氮化铝那样介质损耗因数极小的陶瓷也高效且牢固地接合的方法。



The results show the good crystallinity of the powder was obtained when using xylene as solvent, and the purity of aluminum nitride obtained increase with the reaction temp...

结果发现,用二甲苯为溶剂合成的氮化铝结晶度好,而生成的氮化铝纯度随着反应温度升高而增加,同时表面活性剂的加入对结晶度也存在一定的影响。



The method solves the problem of poor bonding between Cu and aluminum nitride ceramic, and can realize preparation of gradient composite with high temperature difference and poor compatibility.

本发明结合了放电等离子烧结和分步 烧结的方法,解决了金属铜和氮化铝陶瓷之间的结合困难问题,也实现了高温差、高不相容性梯度复合材料的制备。



The method avoids the problem that the wafer break is caused by thermal stress in the course of cooling down, especially is suitable for preparing gallium nitride and aluminum nitride substrates.

该方法避免了降温过程中热应力造成的晶片破裂问题,尤其适于氮化镓、氮化铝衬底的制备。

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